Micron Technology, Inc., announced that its low-power double data rate 5X (LPDDR5X) DRAM and Universal Flash Storage (UFS) 3.1 embedded solutions are now qualified on Qualcomm Technologies’ latest extended reality (XR) platform, Snapdragon® XR2 Gen 2 Platform. Micron’s LPDDR5X and UFS 3.1 deliver next-level speed, performance and low-power consumption in the smallest form factors needed to support untethered mixed reality (MR) and virtual reality (VR) devices. Micron’s LPDDR5X is the company’s most advanced low-power memory, delivering power efficiency enabled by its innovative 1-alpha process node technology and JEDEC power advancements.
The global augmented reality (AR) and VR market is expected to reach $200 billion by 2030, growing at a compound annual growth rate of 24% from 2021.1 Micron’s embedded products provide robust XR-ready solutions to accelerate customer adoption and realize the potential of this expanding market. Enabling concurrent processing across multiple applications and sensors, Micron’s LPDDR5X and UFS 3.1 seamlessly integrate constantly changing presence, position and sensory perception in the metaverse to create realistic, immersive experiences for VR users.
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While Micron’s LPDDR5X can achieve speeds of up to 8.533 Gbps (gigabits per second), it is also backwards compatible for LPDDR5 speeds of 6.4 Gbps, providing device manufacturers with platform integration flexibility while consuming less power.
“The metaverse has vast potential to revolutionize how we work and play. Bringing this innovation to life requires high-performance and low-power hardware that can keep pace with the lightning-fast speeds needed for mixed reality experiences,” said Chris Jacobs, Micron vice president and general manager of Micron’s embedded market segments. “Our LPDDR5X and UFS 3.1 solutions are ideally positioned to serve as the foundation for the next generation of XR devices, providing the performance and power to unlock rich virtual worlds.”
SOURCE : GlobeNewswire
